Samsung’s first DDR4 Memory Modules Unleashed
Published on January 6th, 2011
The age of DDR2 memory modules has already begun to end, the era of DDR3 is on-going and the time of DDR4 is about to begin. Samsung electronics has just completed developing the world’s first DDR4 dynamic RAM module.
The new DDR4 offers 2x the performance of the current DDR3 memory modules and has reduced its power consumption to nearly 50%, 40% to be exact, when used in notebook.
Samsung’s DDR4 utilizes 30 nanometer (nm) class lithography process technology, the smallest circuitry technology to date.
With the new technology, the new DDR4 modules can perform as fast as 1.6Gbps to 3.2Gbps, which is twice as the current DDR3 memory modules.
These new DDR4 can perform data transfer rates of 2.133Gbps at 1.2V with speeds from 1.6Gbps up to 3.2Gbps as mentioned earlier.
Pseudo Open Drain (POD) technology was also used in Samsung’s DDR4 modules. Pseudo Open Drain or POD is a new technology allows DDR4 DRAM to cut the electric current to half as compared to DDR3 when reading and writing data.
But this won’t be available yet, it will take some time for these new babies to be distributed to our local stores. Samsung has just provided a controller with 1.2V 2GB DDR4 Unbuffered Dual In-Line Memory Modules or UDIMM for testing.
By second half of this year, JEDEC Standardization of DDR4 technologies should have been completed. Samsung is working hard with some server makers to insure the completion.
Dong Soo Jun, president of memory division at Samsung Electronics:
“Samsung has been actively supporting the IT industry with our green memory initiative by coming up with eco-friendly, innovative memory products providing higher performance and power efficiency every year. The new DDR4 DRAM will build even greater confidence in our cutting-edge green memory, particularly when we introduce 4Gb DDR4-based products using next generation process technology for mainstream application,”